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Thursday, July 16, 2020 | History

2 edition of Adaptive reference generation for 1T1C ferroelectric memories. found in the catalog.

Adaptive reference generation for 1T1C ferroelectric memories.

Trevis Wray Lloyd Chandler

Adaptive reference generation for 1T1C ferroelectric memories.

by Trevis Wray Lloyd Chandler

  • 57 Want to read
  • 33 Currently reading

Published by National Library of Canada in Ottawa .
Written in English


Edition Notes

Thesis (M.A.Sc.) -- University of Toronto, 2003.

SeriesCanadian theses = -- Thèses canadiennes
The Physical Object
Pagination1 microfiche : negative.
ID Numbers
Open LibraryOL21137634M
ISBN 100612842673

Introduction ¾Ferroelectrics: dielectric crystals which show a spontaneous electric polarization and the direction of polarization can be reoriented by an external electric field ¾In ferroelectric memories, direction of spontaneous polarization is used to store. “A um V 1T1C 4-Mb Nonvolatile Ferroelectric RAM with Fixed Bit-line Reference Voltage Scheme and Data Protection Circuit”, (Samsung), IEEE Journal of Solid State Circuits, Vol. 35, No. 11, November , pp

Ferroelectric field effect transistors (FETs) offer the possibility of active devices that retain their memory state even when switched off. Such devices were conceived in the s, but materials issues have limited their practical use. Mathews et al. (p. [][1]) show that device performance can be improved by using rare-earth manganates, which recently have been shown to have large.   The ferroelectric memory has the feature as a non-volatile RAM as shown in Fig. g endurance cycles up to 10 10 –10 13 cycles have been reached. The recent work on BiSr 2 Ta 2 O 9 ferroelectric material or IrO 2 electrodes have improved the fatigue of switching charge amount, and indicate that even more than 10 12 –10 13 cycles can be achievable. The ns writing speed of .

In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness. In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin.


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Adaptive reference generation for 1T1C ferroelectric memories by Trevis Wray Lloyd Chandler Download PDF EPUB FB2

A reference time, instead of a reference voltage, is generated used to compare stored "0" and "1" in a race of bitlines towards reaching a threshold voltage in a 1T1C FeRAM.

The reference time is. An improved reference voltage generation scheme is proposed for a 1T1C-type ferroelectric random access memory (FRAM), in which the circuit referring to reference cells is redefined and the data are written into reference cells at random between ‘1’ and ‘0’ depending on the voltages of the bitlines during every operation by: 3.

Abstract: New design techniques facilitate a high reliability 1T1C 8Mb ferroelectric random access memory with u 2 cell operating at V on a nm 5LM Cu process. Zero cancellation increases the cell interrogation voltage by using a nonswitching ferroelectric capacitor to remove charge from the bit line that compensates the linear charge from the cell capacitor.

Abstract: An improved reference voltage generation scheme is proposed for a 1T1C-type ferroelectric random access memory (FRAM), in which the circuit referring to reference cells is redefined and the data are written into reference cells at random between `1' and `0' depending on the voltages of the bitlines during every operation by: 3.

Chandler T, Sheikholeslami A, Masui S, Oura M () An adaptive reference generation scheme for 1T1C FeRAMs. In: symposium on VLSI circuits. Digest of Author: Ahmedullah Aziz, Sandeep Krishna Thirumala, Danni Wang, Sumitha George, Xueqing Li, Suman Datta, Vij.

CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): Abstract- New design techniques facilitate a high reliability 1T1C 8Mb ferroelectric random access memory with u 2 cell operating at V on a nm 5LM Cu process.

Zero cancellation increases the cell interrogation voltage by using a non-switching ferroelectric capacitor to remove charge from the bit line that. The reference time is adaptive, tracking process variations, aging, and fatigue of ferroelectric capacitors.

This scheme is implemented in a ×bit testchip in a μm ferroelectric. Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production.

This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. of ferroelectric memory cells have been used (as shown in Figs. and ): (1) Basic operation of 1T1C FeRAM For the most commonly used 1T1C FeRAM, a ferroelectric capacitor is series connected to a N-MOS field effect transistor.

The word line (WL) and bit line (BL) are connected to the gate and drain of the transistor, respectively. The. ns 1 Mb nonvolatile ferroelectric memory with nondriven cell plate T. Chandler, A. Sheikholeslami, S. Masui, and M. Oura, “An adaptive reference generation scheme for 1T1C FeRAMs,” in IEEE Int.

Symp. VLSI Circuits Dig. Tech. Papers, a book chapter on ferroelectric memories. He. Abstract Generating reference signal is indispensable and challenging in ferroelectric random access memory using one-transistor and one-capacitor architecture.

This work presents an architecture. Oura's 6 research works with 84 citations and reads, including: Design and application of ferroelectric memory based nonvolatile SRAM.

The conventional readout of one-transistor–one-capacitor dynamic random-access memories (1T–1C DRAMs) depends on using a sense amplifier to develop the bitline voltage and settle it to the voltage of the power supply, V D D, or to 0 V depending on whether the stored data is “1” or “0,” respectively.

However, using the sense amplifier makes the reading process sluggish. The general construction of an FeRAM cell is similar to a DRAM cell. The storage capacitor, in this case a ferroelectric capacitor (FeCap), is connected in series to the select transistor (see Fig.

Memory cells comprising two transistors and two capacitors (2T/2C, see Fig. A) have enhanced reliability because each cell has its own reference cell and therefore not only the. This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films.

This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. On the other hand, the 1T1C scheme provides advantage of small cell area, but the sensing margin is reduced as a half by setting a reference level in the middle of data “1’ and data “0”.

The sensing margin might be reduced more due to the variation of dummy reference ferroelectric. Abstract: A low-voltage ( V) Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process.

Only two additional masks are required for integration of the ferroelectric module into a single-gate-oxide low-voltage logic. The fabricated 1T1C memory cell was also evaluated in a FRAM circuit. The memory window on the bit line was demonstrated as V, based on the 1T1C memory cell with a TFT having dimensions of 80 μm/5 μm (W/L) and a FeCap with an area of × 10 −3 cm 2 using a bit line capacitor of 1 nF pre-charged at V.

The 1T1C memory cell is. In a ferroelectric crystal, spontaneous polarization is derived from relative displacement of anions and cations.

For example, in lead zirconate titanate (PbZr x Ti 1-x O 3, 0. Abstract. In this chapter, the overview and scaling prospect of ferroelectric random access memory (FeRAM) are presented. First, the memory cell structure, material, operating principle, and current status of FeRAMs and chain FeRAMs are introduced.

For stand‐alone memory application, a ferroelectric NAND (Fe‐NAND) flash memory has been developed to achieve low power consumption, high reliability, and high scalability.

For logic applications, it has been suggested that a FET with a ferroelectric gate stack may achieve negative capacitance and subthreshold slope below 60 mV dec −1.Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production.

This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for.Figure illustrates the three types of ferroelectric memories. Both FRAM and FTJ as memory devices combine an access transistor and a storage node, that is, 1-transistorcapacitor (1T1C) for FRAM and 1-transistorresistor (1T1R) for FTJ.

However, FeFET is an 1T memory, similar to Flash memory devices.